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參數(shù)資料
| 型號(hào)： | 935210150512 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 光電元器件 |
| 英文描述： | 1 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO24 |
| 封裝： | 7.50 MM, PLASTIC, SOT-137-1, SOP-24 |
| 文件頁(yè)數(shù)： | 5/26頁(yè) |
| 文件大?。?/td> | 203K |
| 代理商： | 935210150512 |
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1998 Mar 17
13
Philips Semiconductors
Preliminary specication
QIC read-write amplier
TZA1000
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Maximum permissible ambient temperature is dependent on internal dissipation. Tj is the discriminating factor.
Tj =(Rth(j-a) × Ptot)+Tamb, where Ptot is the total dissipation in the package.
2. Equivalent to discharging a 100 pF capacitor through a 1.5 k
series resistor.
3. Equivalent to discharging a 200 pF capacitor through a 25
series resistor and a 2.5 H series inductance.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with “
SNW-FQ-611E”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD1
read circuit supply voltage
0.3
+5.5
V
VDD2
FB and write circuit supply voltage
0.3
+5.5
V
VDD3
sense current circuit supply voltage
0.3
+13.2
V
IDD1
read circuit supply current
150
mA
IDD2
FB and write circuit supply current
35
mA
IDD3
sense current circuit supply current
35
mA
II(n)
input current on remaining pins
10
+10
mA
Ptot
maximum total power dissipation
1000
mW
Tamb
ambient temperature
0
+70
°C
Tj
junction temperature
note 1
0
+135
°C
Tstg
storage temperature
50
+150
°C
VES(HB)
electrostatic handling: human body model
note 2
1000
+1000
V
VES(MM)
electrostatic handling: machine model
note 3
200
+200
V
SYMBOL
PARAMETER
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient in free air
66
K/W
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