參數(shù)資料
型號： 934057076118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 63 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： PLASTIC, SMD, SC-63, DPAK-3
文件頁數(shù)： 5/12頁
文件大小： 281K
代理商： 934057076118
Philips Semiconductors
BUK9214-30A
TrenchMOS logic level FET
Product data
Rev. 01 — 20 March 2002
2 of 12
9397 750 09373
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
30
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
63
A
Ptot
total power dissipation
Tmb =25 °C
-
107
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID = 25 A
11
14
m
Tj =25 °C; VGS = 4.5 V; ID = 25 A
-
15.5
m
Tj =25 °C; VGS = 10 V; ID = 25 A
9
12
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
30
V
VDGR
drain-gate voltage (DC)
RGS =20k
-30
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-63
A
Tmb = 100 °C; VGS =5V; Figure 2
-45
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
253
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-
107
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
63
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
253
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =63A;
VDS ≤ 30 V; VGS =5V; RGS =50 ;
starting Tj =25 °C
-
230
mJ
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