參數(shù)資料
型號(hào)： 934057076118
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： 63 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝： PLASTIC, SMD, SC-63, DPAK-3
文件頁數(shù)： 10/12頁
文件大小： 281K
代理商： 934057076118
Philips Semiconductors
BUK9214-30A
TrenchMOS logic level FET
Product data
Rev. 01 — 20 March 2002
7 of 12
9397 750 09373
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (°C)
VGS(th)
(V)
min
typ
max
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0123
VGS (V)
ID
(A)
min
typ
max
03nf68
0
10
20
30
40
50
0
102030
40506070
ID (A)
gfs
(S)
03nf73
0
500
1000
1500
2000
2500
3000
3500
10-2
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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