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參數(shù)資料
| 型號： | 934056691115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CMPAK-4 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934056691115 |
2001 Nov 08
5
Philips Semiconductors
Preliminary specification
NPN SiGe wideband transistor
BFU510
0
10
20
30
40
100
1000
10000
f (MHz)
gain
(dB)
MSG
S21
Gmax
Fig.6
Gain as a function of frequency;
typical values.
IC =10 mA; VCE =2 V; Tamb =25 °C.
0
10
20
30
40
50
00.5
11.5
2
V
CB (V)
C
re
(fF)
Fig.7
Feedback capacitance as a function of
collector-base voltage; typical values
IC = 0; f = 1 MHz; Tamb =25 °C.
-4
-2
0
2
4
6
8
10
110
IC (mA)
ITO
(dBm)
Fig.8
Third order intercept point as a function of
collector current
VCE =2 V; f= 2 GHz
-4
-3
-2
-1
0
1
2
3
4
110
IC (mA)
PL 1 dB
(dBm)
Fig.9
PL 1 dB as a function of collector current
VCE = 2 V; f = 2 GHz; source and load tuned for optimum gain.
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