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參數(shù)資料
| 型號： | 934056691115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CMPAK-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934056691115 |
2001 Nov 08
4
Philips Semiconductors
Preliminary specification
NPN SiGe wideband transistor
BFU510
0
20
40
60
0
40
80
120
160
T
S (°C)
P
tot
(mW)
Fig.2 Power derating curve.
0
50
100
150
200
250
0
5
10
15
I
C (mA)
hFE
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =2 V; Tj =25 °C.
0
5
10
15
01
23
V
CE (V)
I
C
(mA)
IB=180A
160A
40A
60A
80A
100
120A
140A
20A
Fig.4
Output characteristics; typical values.
0
10
20
30
40
110
I
C (mA)
f
T
(GHz)
Fig.5
Transition frequency as a function of
collector current; typical values.
VCB = 1 V; f = 2 GHz; Tamb =25 °C
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