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參數(shù)資料
| 型號(hào)： | 934055198114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 121K |
| 代理商： | 934055198114 |
Philips Semiconductors - PIP - BLS3135-50; Microwave power transistor
Product Information
BLS3135-50;
Microwave power
transistor
Information as of 2003-04-23
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Download datasheet
Block diagram
Support & tools
Parametrics
topGeneral description
NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a
ceramic cap (SOT422A) with the common base connected to the flange.
topFeatures
q
Suitable for short and medium pulse applications
q
Internal input and output matching networks for an easy circuit design
q
Emitter ballasting resistors improve ruggedness
q
Gold metallization ensures excellent reliability
q
Interdigitated emitter-base structure provides high emitter efficiency
q
Multicell geometry improves power sharing and reduces thermal resistance.
topApplications
q
Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band.
topDatasheet
Page
count
File
size
(kB)
Datasheet
BLS3135-50
Microwave
power transistor
4/3/2015
Product
specification
12
69
file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/BLS3135-50.html (1 of 2) [May-05-2003 6:05:37 PM]
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