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參數(shù)資料
| 型號： | 934054895127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1500 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 38K |
| 代理商： | 934054895127 |
Philips Semiconductors
Product specification
Damper diode
BY329X-1500, BY329X-1500S
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
4.8
K/W
heatsink
without heatsink compound
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BY329X- 1500
1500S 1500 1500S
V
F
Forward voltage
I
F = 6.5 A
1.1
1.3
1.45
1.6
V
I
F = 6.5 A; Tj = 125 C
1.05
1.2
1.35
1.5
V
I
R
Reverse current
V
R = 1300 V
-
250
-
250
A
V
R = 1300 V; Tj = 125 C
-
1
-
1
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
BY329X 1500 1500S
1500
1500S
t
rr
Reverse recovery time
I
F = 1 A; VR ≥ 30 V;
0.18
0.13
0.23
0.16
s
dI
F/dt = 50A/s
Q
s
Reverse recovery charge
I
F = 2 A; -dIF/dt = 20 A/s
1.6
0.7
2.0
0.95
C
V
fr
Peak forward recovery voltage
I
F = 6.5A; dIF/dt = 50A/s
17
233040
V
t
fr
Forward recovery time
I
F = 6.5A; dIF/dt = 50A/s
210
220
300
320
ns
September 1998
2
Rev 1.100
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