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參數(shù)資料
| 型號： | 934054896127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 35K |
| 代理商： | 934054896127 |
Philips Semiconductors
Product specification
Damper diode
BY329-1500, BY329-1500S
fast, high-voltage
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 1500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.35 V / 1.5 V
High thermal cycling performance
Low thermal resistance
I
F(peak) = 6 A (f = 16 kHz)
I
F(peak) = 6 A (f = 70 kHz)
I
FSM ≤ 75 A
t
rr ≤ 230 ns / 160 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Glass-passivated double diffused
PIN
DESCRIPTION
rectifier diode featuring low forward
voltage drop, fast reverse recovery
1
cathode
and soft recovery characteristic.
The device is intended for use in TV
2
anode
receivers and PC monitors.
tab
cathode
The BY329 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
Peak non-repetitive peak
-
1500
V
reverse voltage
V
RRM
Peak repetitive reverse
-
1500
V
voltage
V
RWM
Crest working reverse voltage
-
1300
V
BY329
-1500
-1500S
I
F(peak)
Peak working forward current
f = 16 kHz
-
6
-
A
f = 70 kHz
-
6
A
I
FRM
Peak repetitive forward
t = 25
s; δ = 0.5;
-
14
A
current
T
mb ≤ 123 C
I
F(RMS)
RMS forward current
-
11
A
I
FSM
Peak non-repetitive forward
t = 10 ms
-
75
A
current
sinusoidal; T
j = 150 C prior to
surge; with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
150
C
temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
2.0
K/W
mounting base
R
th j-a
Thermal resistance junction to in free air
-
60
-
K/W
ambient
k
a
12
1
tab
2
September 1998
1
Rev 1.100
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