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參數(shù)資料
| 型號： | 934054882118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 150 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 92K |
| 代理商： | 934054882118 |
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
2.7
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT404 and SOT428 packages, pcb
-
50
-
K/W
to ambient
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j = 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150C
-
0.8
0.895
V
I
F = 8 A
-
0.92
1.05
V
I
F = 20 A
-
1.1
1.3
V
I
R
Reverse current
V
R = VRWM
-2
10
A
V
R = VRWM; Tj = 100C
-
0.2
0.6
mA
Q
rr
Reverse recovered charge
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/s-
4
11
nC
t
rr1
Reverse recovery time
I
F = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/s20
25
ns
t
rr2
Reverse recovery time
I
F = 0.5 A to IR = 1 A; Irec = 0.25 A
-
15
20
ns
V
fr
Forward recovery voltage
I
F = 1 A; dIF/dt = 10 A/s-
1
-
V
November 1998
2
Rev 1.300
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