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參數(shù)資料
| 型號： | 934054758118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 25 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 78K |
| 代理商： | 934054758118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYL1025B series
Schottky barrier
Fig.1. Maximum forward dissipation P
F = f(IF(AV));
square current waveform where I
F(AV) =IF(RMS) x √D.
Fig.2. Maximum forward dissipation P
F = f(IF(AV));
square current waveform where I
F(AV) =IF(RMS) x √D.
Fig.3. Typical and maximum forward characteristic
I
F = f(VF); parameter Tj
Fig.4. Typical reverse leakage current; I
R = f(VR);
parameter T
j
Fig.5. Typical junction capacitance; C
d = f(VR);
f = 1 MHz; T
j = 25C to 125 C.
Fig.6. Transient thermal impedance; Z
th j-mb = f(tp).
PBYL1025
0
5
10
15
0
2
4
6
8
10
D = 1.0
0.5
0.2
0.1
Rs = 0.016 Ohms
Vo = 0.29 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
144
138
132
126
120
T
I
D =
tp
T
t
0
5
10
15
20
25
1uA
10uA
100uA
1mA
10mA
100mA
PBYR725D
Reverse voltage, VR (V)
Reverse current, IR (A)
50 C
75 C
100 C
125 C
Tj = 25 C
02
46
8
10
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
PBYL1025
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Vo = 0.29 V
Rs = 0.016 Ohms
Tmb(max) / C
126
132
138
144
150
1
10
100
1000
10000
PBYR725D
Reverse voltage, VR (V)
Junction capacitance, Cd (pF)
0
0.2
0.4
0.6
0.8
1
0
5
10
15
PBYR725D
Forward voltage, VR (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYL1025
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
tp
T
P
t
D
October 1998
3
Rev 1.100
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