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參數資料
| 型號： | 934054758118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 25 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/7頁 |
| 文件大小： | 78K |
| 代理商： | 934054758118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYL1025B series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 20 V/ 25 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 10 A
Low thermal resistance
V
F ≤ 0.4 V
GENERAL DESCRIPTION
PINNING
SOT404
Schottky rectifier diodes intended
PIN
DESCRIPTION
for use as output rectifiers in low
voltage, high frequency switched
1
no connection
mode power supplies.
2
cathode
1
The PBYL1025B series is supplied
in the SOT404 surface mounting
3
anode
package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYL10
20B
25B
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 119 C
-
20
25
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 132 C
-
10
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 132 C
-
20
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
130
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a
tab
3
13
tab
2
1 it is not possible to make connection to pin 2 of the SOT428 package
October 1998
1
Rev 1.100
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