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參數(shù)資料
| 型號(hào)： | 934054754118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 934054754118 |
Philips Semiconductors
Product specification
Rectifier diode
BYC10B-600
ultrafast, low switching loss
FEATURES
SYMBOL
QUICK REFERENCE DATA
Extremely fast switching
V
R = 600 V
Low reverse recovery current
Low thermal resistance
V
F ≤ 1.8 V
Reduces switching losses in
associated MOSFET
I
F(AV) = 10 A
t
rr = 19 ns (typ)
APPLICATIONS
PINNING
SOT404
Active power factor correction
PIN
DESCRIPTION
Half-bridge lighting ballasts
Half-bridge/ full-bridge switched
1
no connection
mode power supplies.
2
cathode
1
The BYC10B-600 is supplied in
the SOT404 surface mounting
3
anode
package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
Peak repetitive reverse voltage
-
600
V
RWM
Crest working reverse voltage
-
600
V
R
Continuous reverse voltage
T
mb ≤ 114 C
-
500
V
I
F(AV)
Average forward current
δ = 0.5; with reapplied V
RRM(max);
-
10
A
T
mb ≤ 78 C
I
FRM
Repetitive peak forward current
δ = 0.5; with reapplied V
RRM(max);
-
20
A
T
mb ≤ 78 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
65
A
current.
t = 8.3 ms
-
71
A
sinusoidal; T
j = 150C prior to surge
with reapplied V
RWM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
2
K/W
mounting base
R
th j-a
Thermal resistance junction to
minimum footprint, FR4 board
-
50
-
K/W
ambient
k
a
tab
3
13
tab
2
1 it is not possible to make connection to pin 2 of the SOT404 package
March 2001
1
Rev 1.400
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