- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24693 > 934054540127 (NXP SEMICONDUCTORS) 21 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 934054540127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | 934054540127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP21N06T
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 20 A; parameter VDS
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 17 A
Fig.16. Avalanche energy test circuit.
Fig.17. Switching test circuit.
0
5
10
15
0
2
4
6
8
10
12
VGS/V
QG/nC
VDS = 14V
VDS = 44V
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
0.5
1
1.5
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS = 0.5 LID
2
BV
DSS/(BVDSS VDD)
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
December 1997
6
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934054570118 | 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934054560127 | 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO220-AB |
| 934055349118 | 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 05G4B48 | Silicon Diffused Type Rectifier Stack |
| 934054590135 | 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934054713215 | 制造商:NXP Semiconductors 功能描述:SUB ONLY TXSTR |
| 934054900215 | 制造商:NXP Semiconductors 功能描述:SUB ONLY TXSTR SGNL |
| 934054930215 | 制造商:NXP Semiconductors 功能描述:Diode Schottky 40V 0.2A 3-Pin TO-236AB T/R |
| 934054945115 | 制造商:NXP Semiconductors 功能描述:Diode Switching 100V 0.25A 2-Pin SOD-323 T/R |
| 934055092127 | 制造商:NXP Semiconductors 功能描述:H-OUT #7460 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。