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參數(shù)資料
| 型號： | 934054540127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 21 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 65K |
| 代理商： | 934054540127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP21N06T
Standard level FET
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 10 A; VGS = 10 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.11. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.12. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
012
345
678
9
0
5
10
15
20
25
ID/A
VGS/V
Tj/C =
175
25
BUK759-60
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
5
10
15
20
25
2
3
4
5
6
7
8
9
gfs/S
ID/A
01
23
45
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0.01
0.1
1
10
100
0
.1
.2
.3
.4
.5
.6
.7
.8
.9
1
Thousands
pF
VDS/V
Ciss
Coss
Crss
December 1997
5
Rev 1.100
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