參數(shù)資料
型號(hào): 934050610114
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC PACKAGE-2
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 92K
代理商: 934050610114
1997 Feb 19
3
Philips Semiconductors
Product specication
NPN microwave power transistor
MX0912B251Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
65
V
VCES
collector-emitter voltage
RBE =0
60
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current
tp ≤ 10 s; δ≤ 10%
15
A
Ptot
total power dissipation
(peak power)
Tmb =75 °C; tp ≤ 10 s; δ≤ 10%
690
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
t
≤ 10 s; note 1
235
°C
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
tp =10 s; δ = 10%; Ptot max = 690 W.
handbook, halfpage
50
200
1000
0
200
400
600
800
0
Ptot
(W)
100
Tmb (°C)
MGL041
相關(guān)PDF資料
PDF描述
934050960135 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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934050960115 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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