參數(shù)資料
型號(hào): 934050610114
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC PACKAGE-2
文件頁數(shù): 5/12頁
文件大小: 92K
代理商: 934050610114
1997 Feb 19
2
Philips Semiconductors
Product specication
NPN microwave power transistor
MX0912B251Y
FEATURES
Interdigitated structure; high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration, and specified in class C.
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol.
olumns
e
c
b
MAM045
1
2
Top view
3
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common base class C broadband amplier.
MODE OF
OPERATION
f
(GHz)
VCC
(V)
PL
(W)
Gpo
(dB)
ηC
(%)
Zi/ZL
(
)
Class C
tp =10 s; δ = 10%
0.960 to 1.215
50
>235
>7
>42
see Figs 7 and 8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
相關(guān)PDF資料
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934050960135 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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934050960115 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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