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參數(shù)資料
| 型號： | 934045500113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.05 A, 5000 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934045500113 |
2000 Feb 29
2
Philips Semiconductors
Product specication
High-voltage car ignition diode
BYX135G
FEATURES
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability.
APPLICATIONS
Car ignition systems
Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD61AD2 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
The BYX135G is marked with a green cathode band on the
body.
handbook, halfpage
ka
MBK908
Fig.1 Simplified outline (SOD61AD2) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
5kV
VRWM
crest working reverse voltage
5kV
IF(AV)
average forward current
50
mA
IRSM
non-repetitive peak reverse current
t = 100
s triangular pulse;
Tj max prior to surge
50
mA
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
continuous
175
°C
Tj
junction temperature
max. 30 min.
200
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
6.25
8.75
V
V(BR)R
reverse avalanche breakdown voltage
IR = 100 A
7
9.5
kV
IR
reverse current
VR =VRWMmax; Tj = 175 °C
30
A
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
Tamb =Tleads; lead length = 10 mm
90
K/W
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