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參數(shù)資料
| 型號(hào)： | 934047080127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 15 A, 200 V, SILICON, RECTIFIER DIODE, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 50K |
| 代理商： | 934047080127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV72EW series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F ≤ 0.85 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 30 A
Low thermal resistance
I
RRM = 0.2 A
t
rr ≤ 28 ns
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, ultra-fast, epitaxial rectifier
PIN
DESCRIPTION
diodes intended for use as output
rectifiers in high frequency switched
1
anode 1
mode power supplies.
2
cathode
The BYV72EW series is supplied in
the conventional leaded SOT429
3
anode 2
(TO247) package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV72EW
-150
-200
V
RRM
Peak repetitive reverse voltage
-
150
200
V
RWM
Crest working reverse voltage
-
150
200
V
R
Continuous reverse voltage
T
mb ≤ 144C
-
150
200
V
I
O(AV)
Average rectified output current square wave
-
30
A
(both diodes conducting)
1
δ = 0.5; T
mb ≤ 104 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
30
A
per diode
T
mb ≤ 104 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
150
A
current per diode
t = 8.3 ms
-
160
A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current t
p = 2 s; δ = 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p = 100 s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1 Neglecting switching and reverse current losses.
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
k
a1
a2
13
2
3
1
October 1998
1
Rev 1.200
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參數(shù)描述 |
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