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參數(shù)資料
| 型號(hào)： | 934042590115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 1 A, 600 V, SCR |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | 934042590115 |
Philips Semiconductors
Product specification
Thyristors
BT168GW
logic level for RCD/ GFI/ LCCB Applications
Fig.7. Normalised gate trigger current
I
GT(Tj)/ IGT(25C), versus junction temperature Tj.
Fig.8. Normalised latching current I
L(Tj)/ IL(25C),
versus junction temperature T
j, RGK = 1 k.
Fig.9. Normalised holding current I
H(Tj)/ IH(25C),
versus junction temperature T
j, RGK = 1 k.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-sp, versus
pulse width t
p.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D/dt versus junction temperature Tj.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
VT / V
IT / A
Vo = 1.0 V
Rs = 0.27 Ohms
typ
max
Tj = 125 C
Tj = 25 C
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
tp / s
0.01
0.1
1
10
Zth j-sp (K/W)
100
t
p
P
t
D
BT169W
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25 C)
0
50
100
150
10
100
1000
10000
Tj / C
dVD/dt (V/us)
RGK = 1 kohms
September 2001
4
Rev 1.000
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