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參數(shù)資料
| 型號： | 934042590115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 1 A, 600 V, SCR |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 934042590115 |
Philips Semiconductors
Product specification
Thyristors
BT168GW
logic level for RCD/ GFI/ LCCB Applications
Fig.1. Maximum on-state dissipation, P
tot, versus
average on-state current, I
T(AV), where a = form
factor = I
T(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS) ,
versus solder point temperature T
sp.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
sp ≤ 112C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.2
0.4
0.6
0.8
1
a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W
125
122
119
116
113
110
Tsp(max) / C
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1
10
100
1000
0
2
4
6
8
10
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
1
10
100
1000
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
0.01
0.1
1
10
0
0.5
1
1.5
2
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
BT134W
Tsp / C
IT(RMS) / A
112 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
September 2001
3
Rev 1.000
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