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參數(shù)資料
| 型號(hào)： | 934041830133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 4.2 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 52K |
| 代理商： | 934041830133 |
1996 Oct 07
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectier
BYV4100
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.12.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 3.5 A; Tj =Tj max; see Fig.5
0.78
V
IF = 3.5 A; see Fig.5
0.98
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
120
V
IR
reverse current
VR =VRRMmax;
see Fig.8
5
A
VR =VRRMmax; Tj = 165 °C;
see Fig.8
150
A
trr
reverse recovery time
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.10
15
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.9
245
pF
maximum slope of reverse
recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = 1A/s;
see Fig.11
2A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
dI
R
dt
--------
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