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參數(shù)資料
| 型號(hào)： | 934041830133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 4.2 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 934041830133 |
1996 Oct 07
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectier
BYV4100
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
ka
,
,
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
100
V
IF(AV)
average forward current
Ttp =65 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Fig.2; see also Fig.4
4.0
A
Tamb =60 °C; PCB mounting
(see Fig.12); averaged over any
20 ms period; see Fig.3; see
also Fig.4
1.9
A
IFRM
repetitive peak forward current
Ttp =65 °C; see Fig.6
34
A
Tamb =60 °C; see Fig.7
17
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
90
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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