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參數(shù)資料
| 型號(hào)： | 934041430115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 59K |
| 代理商： | 934041430115 |
1996 Oct 08
5
Philips Semiconductors
Product specication
NPN wideband differential transistor
BFE520
APPLICATION INFORMATION
SPICE parameters for any single BFE520 die
Note
1. These parameters have not been extracted, the
default values are shown.
SEQUENCE No.
PARAMETER
VALUE
UNIT
1
IS
1.016
fA
2
BF
220.1
3
NF
1.000
4
VAF
48.06
V
5
IKF
510.0
mA
6
ISE
283.0
fA
7
NE
2.035
8
BR
100.7
9
NR
0.988
10
VAR
1.692
V
11
IKR
2.352
mA
12
ISC
24.48
aA
13
NC
1.022
14
RB
10.00
15
IRB
1.000
A
16
RBM
10.00
17
RE
775.3
m
18
RC
2.210
19(1)
XTB
0.000
20(1)
EG
1.110
eV
21(1)
XTI
3.000
22
CJE
1.245
pF
23
VJE
600.0
mV
24
MJE
0.258
25
TF
8.616
ps
26
XTF
6.788
27
VTF
1.414
V
28
ITF
110.3
mA
29
PTF
45.01
deg
30
CJC
447.6
fF
31
VJC
189.2
mV
32
MJC
0.071
33
XCJC
0.130
34
TR
543.7
ps
35(1)
CJS
0.000
F
36(1)
VJS
750.0
mV
37(1)
MJS
0.000
38
FC
0.780
Fig.2
Package equivalent circuit SOT353B
(inductance only).
handbook, halfpage
B1
B2
C1
C2
LB
MBG190
LP
T1
T2
LE
E
LE
LP
Fig.3
Package capacitance (fF) between
indicated nodes.
35
E
B2
C2
C1
3.5
35
2
0.4
0.8
0.6
LP
Lead inductances (nH)
LB
LE
35
36
35
2
36
15
B1
E
B2
C2
MBG191
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