參數(shù)資料
型號: 934041430115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, UMT5, S-MINI PACKAGE-5
文件頁數(shù): 2/8頁
文件大?。?/td> 59K
代理商: 934041430115
1996 Oct 08
2
Philips Semiconductors
Product specication
NPN wideband differential transistor
BFE520
FEATURES
Small size
High power gain at low bias current and voltage
Temperature matched
Balanced configuration
hFE matched
Continues to operate at VCE <1V.
APPLICATIONS
Single balanced mixers
Balanced amplifiers
Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface
mount 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
PINNING - SOT353B
PIN
SYMBOL
DESCRIPTION
b1
1
base 1
e
2
emitter
b2
3
base 2
c2
4
collector 2
c1
5
collector 1
handbook, halfpage
1
3
5
4
2
Top view
MAM211
c1
c2
e
b1
b2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
Cre
feedback capacitance CBC
Ie = 0; VCB = 3 V; f = 1 MHz
0.35
0.4
pF
MSG/Gmax
maximum power gain
IC = 20 mA; VCE = 3 V; f = 900 MHz
16
dB
IC = 20 mA; VCE = 3 V; f = 2 GHz
9
dB
F
noise gure
IC = 5 mA; VCE = 3 V; f = 900 MHz;
ΓS = Γopt
1.1
1.6
dB
IC = 5 mA; VCE = 3 V; f = 2 GHz;
ΓS = Γopt
1.9
dB
hFE
DC current gain
IC = 20 mA; VCE = 3 V
60
120
250
Rth j-s
thermal resistance from
junction to soldering point
single loaded
230
K/W
double loaded
115
K/W
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