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參數(shù)資料
| 型號(hào)： | 934041330113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2.7 A, 300 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 934041330113 |
1996 Jun 10
3
Philips Semiconductors
Product specication
Ripple blocking diode
BYM63
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.8.
For more information please refer to the
‘General Part of Handbook SC01.’
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 2 A; Tj = Tj max; see Fig.5
1.34
V
IF = 2 A; see Fig.5
2.30
V
IR
reverse current
VR = VRRMmax;
see Fig.6
10
A
VR = VRRMmax; Tj = 165 °C;
see Fig.6
150
A
tfr
forward recovery time
when switched to IF = 5 A
in 50 ns; see Fig.9
1.5
s
ton
turn-on time
when switched from VF = 0 V to
VF = 3 V; measured between
10% and 90% of IF max;
see Fig.11
400
ns
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
150
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.7
65
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
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