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參數(shù)資料
| 型號： | 934041330113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2.7 A, 300 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 934041330113 |
1996 Jun 10
2
Philips Semiconductors
Product specication
Ripple blocking diode
BYM63
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
Available in ammo-pack.
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD64 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
300
V
VR
continuous reverse voltage
300
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
2.4
A
averaged over any 20 ms period;
Tamb = 65 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
1.0
A
IFRM
repetitive peak forward current
Ttp = 55 °C
21
A
Tamb = 65 °C
8.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
45
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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