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參數(shù)資料
| 型號： | 934039300115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 934039300115 |
2002 May 28
4
Philips Semiconductors
Product specication
Schottky barrier diode
BAT254
GRAPHICAL DATA
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10 1
1.2
0.8
0.4
0
MSA892
(3)
(2)
(1)
(3)
(2)
(1)
(1) Tamb = 125 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
Fig.2
Forward current as a function of forward
voltage; typical values.
010
20
30
V
(V)
R
10 3
I
R
(
A)
10 2
10
1
10 1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb =85 °C.
(3) Tamb =25 °C.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
010
20
30
0
5
10
15
VR (V)
Cd
(pF)
MSA891
f = 1 MHz; Tamb =25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5 Reverse recovery definitions.
handbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IR
MRC129 - 1
F
r
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