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參數(shù)資料
| 型號(hào)： | 934039300115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.2 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 51K |
| 代理商： | 934039300115 |
2002 May 28
2
Philips Semiconductors
Product specication
Schottky barrier diode
BAT254
FEATURES
Low forward voltage
Guard ring protected
Very small ceramic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
SMD package.
handbook, 4 columns
MAM214
ka
cathode mark
top view
side view
bottom view
ak
Fig.1 Simplified outline (SOD110) and symbol.
Marking code: L4.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
600
mA
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
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