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| 型號(hào)： | 934022710215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | 934022710215 |
1995 Aug 31
3
Philips Semiconductors
Product specication
NPN 2 GHz RF power transistor
BFG10; BFG10/X
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to
soldering point
up to Ts =60 °C; note 1;
Ptot = 400 mW
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
20
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 5 mA
8
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
2.5
V
ICES
collector leakage current
VCE =5V; VBE =0
100
A
hFE
DC current gain
IC = 50 mA; VCE =5V
25
Cc
collector capacitance
IE =ie = 0; VCB = 3.6 V; f = 1 MHz
3pF
Cre
feedback capacitance
IC = 0; VCE = 3.6 V; f = 1 MHz
2pF
Fig.2
Power derating curve
handbook, halfpage
0
50
100
200
0
MLC818
150
T ( C)
o
s
Ptot
(mW)
300
500
400
100
IC = 0; f = 1 MHz.
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
MLC819
010
48
2.0
0
1.5
6
1.0
0.5
C c
(pF)
VCB (V)
2
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