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參數(shù)資料
| 型號： | 934022710215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934022710215 |
1995 Aug 31
2
Philips Semiconductors
Product specication
NPN 2 GHz RF power transistor
BFG10; BFG10/X
FEATURES
High power gain
High efficiency
Small size discrete power amplifier
1.9 GHz operating area
Gold metallization ensures
excellent reliability.
APPLICATIONS
Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
PINNING
PIN
DESCRIPTION
BFG10 (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
BFG10/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143.
handbook, 2 columns
Top view
MSB014
12
3
4
MARKING
TYPE NUMBER
CODE
BFG10
N70
BFG10/X
N71
QUICK REFERENCE DATA
RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
MODE OF OPERATION
f
(GHz)
VCE
(V)
PL
(mW)
Gp
(dB)
ηc
(%)
Pulsed, class-AB, duty cycle: < 1 : 8
1.9
3.6
200
≥5
≥50
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
8V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
250
mA
IC(AV)
average collector current
250
mA
Ptot
total power dissipation
up to Ts =60 °C; see Fig.2; note 1
400
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
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