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參數(shù)資料
| 型號： | 934021470235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 100K |
| 代理商： | 934021470235 |
1996 Jul 29
4
Philips Semiconductors
Product specication
N-channel silicon junction
eld-effect transistors
BF556A; BF556B; BF556C
DYNAMIC CHARACTERISTICS
Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
Cis
input capacitance
VDS = 15 V; VGS = 10 V; f = 1 MHz
1.7
pF
VDS = 15 V; VGS = 0; f = 1 MHz
3
pF
Crs
reverse transfer capacitance
VDS = 15 V; VGS = 10 V; f = 1 MHz
0.8
pF
VDS = 15 V; VGS = 0; f = 1 MHz
0.9
pF
gis
common source input conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
15
S
VDS = 10 V; ID = 1 mA; f = 450 MHz
300
S
gfs
common source transfer conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
2
mS
VDS = 10 V; ID = 1 mA; f = 450 MHz
1.8
mS
grs
common source reverse conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
6
S
VDS = 10 V; ID = 1 mA; f = 450 MHz
40
S
gos
common source output conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
30
S
VDS = 10 V; ID = 1 mA; f = 450 MHz
60
S
Vn
equivalent input noise voltage
VDS =10V; ID = 1 mA; f = 100 Hz
40
nV/
√Hz
Fig.2
Drain current as a function of gate-source
cut-off voltage; typical values.
VDS =15V.
handbook, halfpage
0
4
8
12
16
20
012
3456
7
MRC154
IDSS
(mA)
VGSoff (V)
Fig.3
Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
VDS = 15 V; ID =1 A.
handbook, halfpage
MRC156
0
2
4
6
8
10
01
2345
67
VGSoff (V)
Yfs
(mS)
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