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參數(shù)資料
| 型號： | 934021470235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 100K |
| 代理商： | 934021470235 |
1996 Jul 29
2
Philips Semiconductors
Product specication
N-channel silicon junction
eld-effect transistors
BF556A; BF556B; BF556C
FEATURES
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage.
APPLICATIONS
Impedance converters in e.g. electret microphones and
infra-red detectors
VHF amplifiers in oscillators and mixers.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate‘
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
Marking codes:
BF556A: M84.
BF556B: M85.
BF556C: M86.
handbook, halfpage
s
d
g
21
3
MAM036
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
±30
V
VGSoff
gate-source cut-off voltage
ID = 200 A; VDS =15V
0.5
7.5
V
IDSS
drain current
VGS = 0; VDS =15V
BF556A
3
7
mA
BF556B
6
13
mA
BF556C
11
18
mA
Ptot
total power dissipation
up to Tamb =25 °C
250
mW
y
fs
forward transfer admittance
VGS = 0; VDS =15V
4.5
mS
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