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參數(shù)資料
| 型號： | 934021430115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 934021430115 |
2000 May 30
5
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFS540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
handbook, halfpage
MRC007
0
4
8
12
16
20
0
10203040
50
I
(mA)
C
GUM
(dB)
4 V
V
= 8 V
CE
Fig.6
Maximum unilateral power gain as a
function of collector current.
f = 900 MHz; Tamb =25 °C.
Fig.7 Gain as a function of collector current.
VCE = 8 V; f = 2 GHz; Tamb =25 °C.
handbook, halfpage
MRC006
0
5
10
15
0
204060
I
(mA)
C
GUM
Gmax
gain
(dB)
Fig.8 Gain as a function of frequency.
IC = 10 mA; VCE = 8 V; Tamb =25 °C.
handbook, halfpage
MRC004
0
10
20
30
40
50
101
102
110
f (GHz)
MSG
gain
GUM
Gmax
Fig.9 Gain as a function of frequency.
IC = 40 mA; VCE = 8 V; Tamb =25 °C.
handbook, halfpage
MRC005
0
10
20
30
40
50
101
102
110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
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