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參數(shù)資料
| 型號： | 934021430115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 934021430115 |
2000 May 30
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFS540
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 package.
APPLICATIONS
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
DESCRIPTION
NPN transistor in a SOT323 plastic
package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
Marking code: N4.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
120
mA
Ptot
total power dissipation
Ts ≤ 80 °C; note 1
500
mW
hFE
DC current gain
IC = 40 mA; VCE =8V; Tj =25 °C
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
14
dB
F
noise gure
IC = 10 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
1.3
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
120
mA
Ptot
total power dissipation
Ts ≤ 80 °C; note 1
500
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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