參數(shù)資料
型號(hào)： 934021370115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, UMT3, SC-70, CMPAK-3
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 113K
代理商： 934021370115
September 1995
4
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFS505
CHARACTERISTICS
Tj =25 °C, unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. IC = 5 mA; VCE = 6 V; RL =50 ; f = 900 MHz; Tamb =25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 898 MHz and at f(2pq) = 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =6 V
50
nA
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
0.4
pF
Cc
collector capacitance
IE =ie = 0; VCB = 6 V; f = 1 MHz
0.4
pF
Cre
feedback capacitance
IC = 0; VCB = 0.5 V; f = 1 MHz
0.3
pF
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
17
dB
IC = 5 mA; VCE = 6 V; f = 2 GHz;
Tamb =25 °C
10
dB
S
21
2
insertion power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
13
14
dB
F
noise gure
Γ
s = Γopt;IC = 1.25 mA; VCE =6 V;
f = 900 MHz; Tamb =25 °C
1.2
1.7
dB
Γs = Γopt;IC = 5 mA; VCE =6 V;
f = 900 MHz; Tamb =25 °C
1.6
2.1
dB
Γ
s = Γopt;IC = 1.25 mA; VCE =6 V;
f = 2 GHz; Tamb =25 °C
1.9
dB
PL1
output power at 1 dB gain
compression
Ic = 5 mA; VCE = 6 V; RL =50 ;
f = 900 MHz; Tamb =25 °C
4
dBm
ITO
third order intercept point
note 2
10
dBm
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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