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參數(shù)資料
| 型號(hào)： | 934021370115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 113K |
| 代理商： | 934021370115 |
September 1995
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFS505
FEATURES
Low current consumption
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
PINNING
PIN
DESCRIPTION
Code: N0
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
IC
DC collector current
18
mA
Ptot
total power dissipation
up to Ts = 147 °C; note 1
150
mW
hFE
DC current gain
IC = 5 mA; VCE = 6 V; Tj =25 °C
60
120
250
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power gain
Ic = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
17
dB
F
noise gure
Ic = 1.25 mA; VCE =6 V;
f = 900 MHz; Tamb =25 °C
1.2
1.7
dB
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