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參數(shù)資料
| 型號(hào)： | 934021360115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | 934021360115 |
December 1997
5
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFS25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
Fig.6 Gain as a function of collector current.
VCE = 1 V; f = 500 MHz; Tamb =25 °C.
handbook, halfpage
MRC035
0
5
10
15
20
25
0
0.5
1
1.5
2
2.5
MSG
GUM
gain
(dB)
IC (mA)
Fig.7
Maximum unilateral power gain as a
function of collector current.
f = 1 GHz; Tamb =25 °C.
handbook, halfpage
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
IC (mA)
GUM
(dB)
MRC036
1 V
= 3 V
CE
V
Fig.8 Gain as a function of frequency.
IC = 0.5 mA; VCE = 1 V; Tamb =25 °C.
handbook, halfpage
MRC034
0
10
20
30
40
50
0.01
0.1
1
10
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.9 Gain as a function of frequency.
IC = 1 mA; VCE = 1 V; Tamb =25 °C.
handbook, halfpage
MRC033
0
10
20
30
40
50
101
102
110
MSG
GUM
Gmax
gain
(dB)
f (GHz)
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