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參數(shù)資料
| 型號(hào)： | 934021360115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 126K |
| 代理商： | 934021360115 |
December 1997
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFS25A
FEATURES
Low current consumption
Low noise figure
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
PINNING
PIN
DESCRIPTION
Code: N6
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
8V
VCEO
collector-emitter voltage
open base
5V
IC
DC collector current
6.5
mA
Ptot
total power dissipation
up to Ts = 170 °C; note 1
32
mW
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V; Tj =25 °C
50
80
200
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb =25 °C
3.5
5
GHz
GUM
maximum unilateral power gain
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb =25 °C
13
dB
F
noise gure
Ic = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb =25 °C
1.8
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
8V
VCEO
collector-emitter voltage
open base
5V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
6.5
mA
Ptot
total power dissipation
up to Ts = 170 °C; note 1
32
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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