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參數(shù)資料
| 型號： | 934021070135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 101K |
| 代理商： | 934021070135 |
September 1995
3
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistor
BFQ67W
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C, unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts =118 °C; note 1
190 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =5 V
50
nA
hFE
DC current gain
IC = 15 mA; VCE = 5 V
60
100
Cc
collector capacitance
IE =ie = 0; VCB = 8 V; f = 1 MHz
0.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.3
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.5
pF
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
8
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 15 mA; VCE = 8 V; f = 1 GHz
Tamb =25 °C
13
dB
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
8
dB
F
noise gure
Γ
s = Γopt;IC = 5 mA; VCE =8 V;
f=1GHz
1.3
dB
Γ
s = Γopt;IC = 15 mA; VCE =8 V;
f=1GHz
2
dB
Γ
s = Γopt;IC = 5 mA; VCE =8 V;
f=2GHz
2.2
dB
IC = 5 mA; VCE =8 V;
f = 2 GHz; Zs =60
2.5
dB
Γs = Γopt;IC = 15 mA; VCE =8 V;
f=2GHz
2.7
dB
IC = 5 mA; VCE =8 V;
f = 2 GHz; Zs =60
3
dB
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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