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參數(shù)資料
| 型號： | 934021070135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 934021070135 |
September 1995
2
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistor
BFQ67W
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
PINNING
PIN
DESCRIPTION
Code: V2
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
IC
DC collector current
50
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
300
mW
hFE
DC current gain
IC = 15 mA; VCE = 5 V; Tj =25 °C
60
100
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
8
GHz
GUM
maximum unilateral power gain
Ic = 15 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
13
dB
F
noise gure
Ic = 5 mA; VCE = 8 V; f = 1 GHz
1.3
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
50
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
300
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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