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參數(shù)資料
| 型號： | 934019820115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 550 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 934019820115 |
2001 May 18
3
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSP122
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID =10 A; VGS = 0
200
V
IDSS
drain-source leakage current
VDS = 160 V; VGS =0
1
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
100
nA
VGSth
gate-source threshold voltage
ID = 1 mA; VGS =VDS
0.4
2V
RDSon
drain-source on-resistance
ID = 750 mA; VGS =10V
1.7
2.5
ID = 20 mA; VGS = 2.4 V
3
Y
fs
transfer admittance
ID = 750 mA; VDS = 25 V
400
900
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
100
pF
Coss
output capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
20
pF
Crss
reverse transfer capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
10
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 750 mA; VDD =50V;
VGS =0to10V
10
20
ns
toff
turn-off time
ID = 750 mA; VDD = 50 V;
VGS = 0 to 10 V
45
60
ns
Fig.2 Switching times test circuit.
VDD =50V.
handbook, halfpage
MBB691
50
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
10 %
ton
toff
OUTPUT
INPUT
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