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參數(shù)資料
| 型號(hào)： | 934019820115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 550 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 934019820115 |
2001 May 18
2
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSP122
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
SOT223 package and intended for
use as a line current interruptor in
telephone sets and for applications in
relay, high-speed and line
transformer drivers.
PINNING - SOT223
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VDS
drain-source voltage (DC)
200
V
ID
drain current (DC)
550
mA
RDSon
drain-source on-state resistance
2.5
VGSth
gate-source threshold voltage
2
V
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
MAM054
4
12
3
Top view
s
d
g
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
6cm2.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an epoxy printed circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum
6cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
200
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
550
mA
IDM
peak drain current
3A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.5
W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
83.3
K/W
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