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參數(shù)資料
| 型號(hào)： | 934018850215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 14/16頁(yè) |
| 文件大小： | 125K |
| 代理商： | 934018850215 |
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2000 May 23
7
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG540; BFG540/X;
BFG540/XR
Fig.11 Intermodulation distortion as a function of
collector current.
handbook, halfpage
10
60
20
70
60
50
40
30
20
30
40
dim
(dB)
IC (mA)
50
MEA973
Fig.12 Second order intermodulation distortion as
a function of collector current.
handbook, halfpage
10
60
20
70
60
50
40
30
20
30
40
d2
(dB)
IC (mA)
50
MEA972
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
VCE =8V.
handbook, halfpage
5
0
1
2
5
0
5
10
Gass
(dB)
15
20
3
Fmin
(dB)
IC (mA)
4
MRA760
1
102
10
2000 MHz
1000 MHz
2000 MHz
1000 MHz
f = 900 MHz
Gass
Fmin
900 MHz
500 MHz
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
VCE =8V.
handbook, halfpage
5
0
1
2
5
0
5
10
Gass
(dB)
15
20
3
Fmin
(dB)
f (MHz)
4
MRA761
102
104
103
Gass
10 mA
Fmin
40 mA
IC = 10 mA
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