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參數(shù)資料
| 型號(hào)： | 934018850215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | 934018850215 |
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2000 May 23
3
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG540; BFG540/X;
BFG540/XR
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
IC
DC collector current
120
mA
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
400
mW
hFE
DC current gain
IC = 40 mA; VCE =8V; Tj =25 °C
100
120
250
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
0.5
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
18
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
11
dB
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
15
16
dB
F
noise gure
Γs = Γopt; IC = 10 mA; VCE =8V;
f = 900 MHz; Tamb =25 °C
1.3
1.8
dB
Γ
s = Γopt; IC = 40 mA; VCE =8V;
f = 900 MHz; Tamb =25 °C
1.9
2.4
dB
Γs = Γopt; IC = 10 mA; VCE =8V;
f = 2 GHz; Tamb =25 °C
2.1
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
120
mA
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
400
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 60 °C; note 1
290
K/W
s
21
2
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