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參數(shù)資料
| 型號： | 934018820235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 934018820235 |
September 1995
4
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. IC = 20 mA; VCE = 6 V; RL =50 ; f = 900 MHz; Tamb =25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2pq) = 898 MHz and f(2qp) = 904 MHz.
3. dim = 60 dB (DIN 45004B);
Vp =Vo;Vq =Vo 6 dB; Vr =Vo 6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 6 V
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Ce
emitter capacitance
IC =ic =0;VEB = 0.5 V; f = 1 MHz
1
pF
Cc
collector capacitance
IE =ie =0;VCB = 6 V; f = 1 MHz
0.6
pF
Cre
feedback capacitance
IC =0;VCB = 6 V; f = 1 MHz
0.3
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral
power gain (note 1)
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
19
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
13
dB
S
21
2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
18
dB
F
noise gure
Γ
s = Γopt;IC = 5 mA; VCE =6V;
f = 900 MHz; Tamb =25 °C
1.1
1.6
dB
Γs = Γopt; IC = 20 mA; VCE =6 V;
f = 900 MHz; Tamb =25 °C
1.6
2.1
dB
Γ
s = Γopt;IC = 5 mA; VCE =6 V;
f = 2 GHz; Tamb =25 °C
1.9
dB
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL =50 ;
f = 900 MHz; Tamb =25 °C
17
dBm
ITO
third order intercept point
note 2
26
dBm
Vo
output voltage
note 3
275
mV
d2
second order intermodulation
distortion
IC = 20 mA; VCE = 6 V; Vo = 75 mV;
Tamb =25 °C; f(p+q) = 810 MHz
50
dB
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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