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參數(shù)資料
| 型號： | 934018820235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 934018820235 |
September 1995
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN
DESCRIPTION
BFG520 (Fig.1) Code: N36
1
collector
2
base
3
emitter
4
emitter
BFG520/X (Fig.1) Code: N42
1
collector
2
emitter
3
base
4
emitter
BFG520/XR (Fig.2) Code: N48
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143B.
fpage
Top view
MSB014
12
3
4
Fig.2 SOT143R.
handbook, 2 columns
Top view
MSB035
1
2
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage open base
15
V
Ic
DC collector current
70
mA
Ptot
total power dissipation
up to Ts =88 °C; note 1
300
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj =25 °C
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
0.3
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
19
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb =25 °C
13
dB
S
21
2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
17
18
dB
F
noise gure
Γs = Γopt ; Ic = 5 mA; VCE =6V;
f = 900 MHz; Tamb =25 °C
1.1
1.6
dB
Γs = Γopt ; IC = 20 mA; VCE =6 V;
f = 900 MHz; Tamb =25 °C
1.6
2.1
dB
Γ
s = Γopt ; IC = 5 mA; VCE = 8 V;
f = 2 GHz; Tamb =25 °C
1.9
dB
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