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參數(shù)資料
| 型號(hào)： | 934015620112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT115J, 9 PIN |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 934015620112 |
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2001 Nov 15
3
Philips Semiconductors
Product specication
750 MHz, 18.5 dB gain push-pull amplier
BGY785A
CHARACTERISTICS
Table 1
Bandwidth 40 to 750 MHz; VB = 24 V; Tcase =30 °C; ZS =ZL =75
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo 6 dB;
fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 738.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
18.5
19
dB
f = 750 MHz
18.5
19.5
dB
SL
slope cable equivalent
f = 40 to 750 MHz
0
0.9
2
dB
FL
atness of frequency response
f = 40 to 750 MHz
±0.1
±0.3
dB
s11
input return losses
f = 40 to 80 MHz
20
30
dB
f = 80 to 160 MHz
18.5
29.5
dB
f = 160 to 320 MHz
17
28
dB
f = 320 to 640 MHz
15.5
26
dB
f = 640 to 750 MHz
14
21
dB
s22
output return losses
f = 40 to 80 MHz
20
29
dB
f = 80 to 160 MHz
18.5
26
dB
f = 160 to 320 MHz
17
23.5
dB
f = 320 to 640 MHz
15.5
22
dB
f = 640 to 750 MHz
14
24
dB
CTB
composite triple beat
110 channels at; Vo = 44 dBmV;
measured at 745.25 MHz
54.5 53
dB
Xmod
cross modulation
110 channels at; Vo = 44 dBmV;
measured at 55.25 MHz
57.5 56
dB
CSO
composite second order
distortion
110 channels at; Vo = 44 dBmV;
measured at 746.5 MHz
62
53
dB
d2
second order distortion
note 1
77
65
dB
Vo
output voltage
dim = 60 dB; note 2
59
62
dBmV
F
noise gure
f = 50 MHz
4.5
5.5
dB
f = 450 MHz
5.5
dB
f = 550 MHz
5.5
dB
f = 600 MHz
6dB
f = 750 MHz
67dB
Itot
total current consumption (DC)
note 3
225
240
mA
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