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參數(shù)資料
| 型號(hào)： | 934015620112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT115J, 9 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 934015620112 |
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2001 Nov 15
2
Philips Semiconductors
Product specication
750 MHz, 18.5 dB gain push-pull amplier
BGY785A
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid high dynamic range cascode amplifier module in a
SOT115J package operating with a voltage supply of
24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 750 MHz
18.5
dB
Itot
total current consumption (DC)
VB =24V
240
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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