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參數(shù)資料
| 型號： | 934006660112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-6 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 934006660112 |
October 1992
6
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF542
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb = 25 °C unless otherwise specied.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
CW, class-B
500
28
50
5
> 13
typ. 16.5
> 50
typ. 59
Ruggedness in class-B operation
The BLF542 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases under the following conditions: VDS = 28 V;
f = 500 MHz at rated output power.
Fig.9
Power gain and efficiency as functions of
load power, typical values.
Class-B operation; VDS = 28 V; IDQ = 10 mA;
ZL = 9.7 + j24.5 ; f = 500 MHz.
handbook, halfpage
0
5
10
15
20
0
20
40
60
80
2468
10
0
PL (W)
Gp
(dB)
Gp
η
(%)
η
MRA969
Fig.10 Load power as a function of input power,
typical values.
Class-B operation; VDS = 28 V; IDQ = 10 mA;
ZL = 9.7 + j24.5 ; f = 500 MHz.
handbook, halfpage
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
PL
(W)
PIN (W)
MRA970
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