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參數(shù)資料
| 型號(hào)： | 934006660112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-6 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | 934006660112 |
October 1992
4
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF542
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 0.1 mA; VGS =0
65
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
10
A
IGSS
gate-source leakage current
±VGS = 20 V; VDS =0
1
A
VGS(th)
gate-source threshold voltage
ID = 10 mA; VDS = 10 V
2
4.5
V
gfs
forward transconductance
ID = 0.3 A; VDS = 10 V
160
240
mS
RDS(on)
drain-source on-resistance
ID = 0.3 A; VGS = 15 V
3.3
5
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
1.4
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
14
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
9.4
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
1.7
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS = 10 V.
handbook, halfpage
0
100
200
300
4
2
–2
–4
0
MBB777
ID (mA)
T.C.
(mV/K)
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VDS = 10 V; Tj = 25 °C.
handbook, halfpage
0
1.5
1
0.5
0
510
15
MBB759
VGS (V)
ID
(A)
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